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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-article-BAT3-0022-0002

Czasopismo

Journal of Telecommunications and Information Technology

Tytuł artykułu

Gate dielectrics: process integration issues and electrical properties

Autorzy Schwalke, U. 
Treść / Zawartość
Warianty tytułu
Języki publikacji EN
Abstrakty
EN In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with the high-k material have been developed and were applied for realisation of MOS structures. For the first time Pr2O3 has been integrated successfully in a conventional MOS process with n+ poly-silicon gate electrode. The electrical properties of Pr2O3 MOS capacitors are presented and discussed.
Słowa kluczowe
EN high-k dielectrics   CMOS   Pr2O3   process integration   resist removal   wet chemical cleaning   wet chemical etching   RIE  
Wydawca Instytut Łączności - Państwowy Instytut Badawczy
Czasopismo Journal of Telecommunications and Information Technology
Rocznik 2005
Tom nr 1
Strony 7--10
Opis fizyczny Bibliogr. 6 poz., rys.
Twórcy
autor Schwalke, U.
Bibliografia
[1] U. Schwalke, A. Gschwandtner, G. Innertsberger, and M. Keber, "Through-the-gate-implanted ultrathin gate oxide MOSFETs with corner parasitics-free shallow-trench-isolation", IEEE EDL, vol. 20, no. 7, 1999, p. 363.
[2] The International Technology Roadmap for Semiconductor, Semiconductor Industry Association, 1999, http://public.itrs.net/Files/2003ITRS/Home2003.htm
[3] A. Kerber, E. Cartier, R. Degraeve, L. Pantisano, Ph. Roussel, and G. Groeseneken, "Strong correlation between dielectric reliability and charge trapping in SiO2/Al2O3 gate stacks with TiN electrodes", in VLSI Symp. Technol., Honolulu, USA, 2002.
[4] P. J. Chen, E. Cartier, R. J. Carter, T. Kauerauf , C. Zhao, J. Petry, V. Cosnier, Z. Xu, A. Kerber, W. Tsai, E. Young, S. Kubicek, M. Caymax, W. Vandervorst, S. De Gendt, M. Heyns, M. Copel, P. Bajolet, and J. Maes, "Thermal stability and scalability of Zraluminate-based high-k gate stacks", in VLSI Symp. Technol., Honolulu, USA, 2002.
[5] H. J. Osten, J. P. Liu, P. Gaworzewski, E. Bugiel, and P. Zaumseil, "High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide", Tech. Dig. IEDM, 2000, pp. 653-656.
[6] H. J. Osten, E. Bugiel, J. Dąbrowski, A. Fissel, T. Guminskaya, J. P. Liu, H. J. Mussig, and P. Zaumseil, "Epitaxial praseodymium oxide: a new high-k dielectric", in Proc. Int. Worksh. Gate Insulat., Tokyo, Japan, 2001, pp. 100-103.
Kolekcja BazTech
Identyfikator YADDA bwmeta1.element.baztech-article-BAT3-0022-0002
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