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The construction of the microsensor with the ultrasonic wave of Lamba-type as well as the conditions of the wave propagation are presented. The possibilities of the fabrication of multi-layer membranes on a silicon base using the microelectronics technologies are presented and discussed. The analysis of the usefulness of the processes mentioned for the production of thin membrane sensors was carried out taking into consideration intrinsic stresses. A summary of the experimental results is given and the most useful parameters of the membrane ultrasonic sensors are pointed out.
Słowa kluczowe
Czasopismo
Rocznik
Tom
Strony
479--486
Opis fizyczny
Bibliogr. 12 poz., fot., rys., wykr.
Twórcy
autor
- Technical University of Łódź Institute of Theoretical Electrotechnics, Metrology and Materials Science
Bibliografia
- [1] J. Gołębiowski, Silicon membrane sensors based on piezoelectric resonators, Proceedings of the 6 MIXED Design of Integrated Curcuits and Systems MIXDES’99, Krak˘w, 285-288 (1999).
- [2] R. White, P.J. Wicher, S.W. Wenzel and E.T. Zellers, Plate-mode ultrasonic oscillator sensors, IEEE Trans. Ultrasonics Ferroelectr. Freq. Control, 34, 162-171 (1987).
- [3] D.F.L. Jenkis, M.J. Cunningham, G. Velu and D. Remiens, The use of sputtered ZnO piezoelectric thin as brod-band microactuators, Sensors and Actuators, A63, 135-139 (1997).
- [4] J. Gołębiowski, Fabrication of piezoelectric thin film of zinc oxide in composite membrane of ultrasonic microsensors, J. Mat. Sci., 34, 19, 4661-4664 (1999).
- [5] R.T. Howe and R.S. Muller, Stress in polycrystalline and amorphous silicon thin films, J. Appl. Phys., 54, 4674-4678 (1983).
- [6] M. Chang, J. Wong and D.N.K. Wang, Low stress, low hydrogen, nitride deposition, Solid State Technology, 5, 462-468 (1988).
- [7] E.A. Irene, Residual stress in silicon nitride films, J. Electr. Mater., 5, 287-297 (1976).
- [8] M. Sekimoto, H. Yoshihara and T. Ohkubo, Silicon nitride single-layer x-ray mask, J. Vac. Sci. Technol., 21, 1017-1021 (1982).
- [9] A. Muller et al., Dielectric membrane support, European Semiconductor, 19, 27-29 (1997).
- [10] J. Gołębiowski, T. Budzyński, P. Grabiec, J. Jaźwiński and J. Koszur, Proceedings of the Conference on “Optoelectronic and Electronic Sensors COE’98”, Jastarnia, Poland, 239-243 (1998).
- [11] B. Folkmer, P. Steiner and W. Lang, Silicon nitride membrane sensors with monocrystalline transducers, Sensors and Actuators, A51, 71-75 (1995).
- [12] Ch. Burrer and J. Esteve, High-precision BESOI-based resonant accelerometer, Sensors and Actuators, A50, 7-12 (1995).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BAT3-0007-0062
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