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Początek i rozwój półprzewodnikowych laserów VCSEL

Wybrane pełne teksty z tego czasopisma
Warianty tytułu
The beginnings and development of VCSELs
Języki publikacji
W pracy przedstawiono historię rozwoju laserów półprzewodnikowych o emisji powierzchniowej z pionową wnęką rezonansową (laserów VCSEL). Odnotowano ich najważniejsze przełomowe rozwiązania technologiczne oraz konstrukcyjno-materiałowe. Podano też parametry eksploatacyjne tych przyrządów na poszczególnych etapach rozwoju i porównano ich własności z laserami o emisji krawędziowej. Szczególny nacisk położono na pokazanie rozwoju i obecnego stanu azotkowych laserów VCSEL. Przedstawiono też wybrane wyniki modelowania działania tych konstrukcji.
History of a development of surface-emitting semiconductor lasers with a vertical cavity (VCSEL lasers) is presented. The most important turning points of their technology solutions and material structures are described. Laser operation parameters are shown for successive development stages. Properties of surface-emitting lasers are compared with those of edge-emitting ones. Development of structures of nitride VCSELs is shown together with characterization of their current state. Results of numerical simulations of an operation of various surface-emitting nitride lasers are presented.
Opis fizyczny
Bibliogr. 81 poz., rys.
  • Politechnika Łódzka, Instytut Fizyki, ul. Wólczańska 219, 90-924 Łódź
  • Politechnika Łódzka, Instytut Fizyki, ul. Wólczańska 219, 90-924 Łódź
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