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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-a449dffc-2bd8-4e9e-a782-1eb26738b4f5

Czasopismo

Materials Science Poland

Tytuł artykułu

Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method

Autorzy Kijaszek, W.  Oleszkiewicz, W.  Zakrzewski, A.  Patela, S.  Tłaczała, M. 
Treść / Zawartość http://www.materialsscience.pwr.wroc.pl/
Warianty tytułu
Języki publikacji EN
Abstrakty
EN In this study, the authors deposited silicon oxynitride films by Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF PECVD) method. The research explores the relationship between the deposition process parameters and the optical properties of the deposited SiOxNyfilms. The optical constants of SiOxNyfilms were measured and calculated by spectroscopic ellipsometry method. Additionally, the authors investigated the possibility of controlling the deposited film composition by the flow ratio of different gaseous precursors: ammonia (NH3), diluted silane (2%SiH4/98%N2), nitrous oxide (N2O) and nitrogen (N2). The gas mixture introduced to the working chamber during the growth of the film has the influence on the Si–O and Si–N bonds formation and the ratio between these bonds determines the refractive index of the deposited film.
Słowa kluczowe
EN silicon oxynitride   RF PECVD   spectroscopic ellipsometry   reflection coefficient  
Wydawca Springer
Czasopismo Materials Science Poland
Rocznik 2016
Tom Vol. 34, No. 4
Strony 868--871
Opis fizyczny Bibliogr. 10 poz., rys.
Twórcy
autor Kijaszek, W.
  • Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
autor Oleszkiewicz, W.
  • Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
autor Zakrzewski, A.
  • Division of Microsystems and Photonics, Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
autor Patela, S.
  • Division of Microsystems and Photonics, Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
autor Tłaczała, M.
  • Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Bibliografia
[1] DO J. H., KANG H. S., KANG B. K., Microelectron Eng 85 (2008), 1820.
[2] SZEKERESA A., NIKOLOVA T., SIMEONOV S., GUSHTEROV A., HAMELMANN F., HEINZMANN U., Microelectron J 37 (2006), 64.
[3] BRINKMANN N., SOMMER D., MICARD G., HAHN G., TERHEIDEN B., Sol Eng Mat Sol C 108 (2013), 180.
[4] SHARMA S. K., BARTHWAL S., SINGH V., KU MAR A., DWIVEDI P. K., PRASAD B., KUMAR D., Mi cron 44, 2013, 339.
[5] LIU Y., LIN I.-K., ZHANG X., Mat Sci Eng: A 489, Iss 1–2 (2008), 294.
[6] KIJASZEK W., OLESZKIEWICZ W., ZAKRZEWSKI A., PATELA S., TŁACZAŁA M., Proceedings of 2013 Inter national Young Students and Scientists “Photonics and Microsystems”, 1214.07.2013, St Marienthal, Germany, 42.
[7] HUSSEIN M. G., WÖRHOFF K., SENGO G., DRIESSEN A., Thin Solid Films 515 (2007), 3779.
[8] DUTTAGUPTA S., MA F., HOEX B., MUELLER T., ABERLE A. G., Energy Procedia 15 (2012), 78.
[9] MAZUR M., SZYMAŃSKA M., KACZMAREK D., KALISZ M., WOJCIESZAK D., DOMARADZKI J., PLACIDO F., Appl Surf Sci 301 (2014), 63.
[10] MAZUR M., WOJCIESZAK D., DOMARADZKI J., KACZMAREK D., SONG S., PLACIDO F., Opto Electron Rev 21(2), 233.
Uwagi
Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).
Kolekcja BazTech
Identyfikator YADDA bwmeta1.element.baztech-a449dffc-2bd8-4e9e-a782-1eb26738b4f5
Identyfikatory
DOI 10.1515/msp-2016-0111