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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-a17088a0-d1b8-443e-8094-5dca6e9ce599

Czasopismo

Materials Science Poland

Tytuł artykułu

Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates

Autorzy Kosior, Ł.  Radziewicz, D.  Zborowska-Lindert, I.  Stafiniak, A.  Badura, M.  Ściana, B. 
Treść / Zawartość http://www.materialsscience.pwr.wroc.pl/
Warianty tytułu
Języki publikacji EN
Abstrakty
EN The main goal of the studies on epitaxial regrowth process of InP on patterned substrates is to gain knowledge about growth rates and interface quality on various areas to improve the fabrication technology for future applications. Prepared samples were measured at every step of the process by scanning electron microscope (SEM), optical microscope with dark field and phase contrast modes, atomic force microscope (AFM) and also using optical profilometer WLI (White Light Interferometer). Fabrication steps were divided into three main groups. First was the epitaxial growth of 5 µm thick InP layer. Next was patterning, which was made by applying a mask film on the epilayer. Shapes of the mesas after wet chemical etching with photoresist as a mask as well as the shapes of mesas slopes were irregular on the whole substrate area. These problems were solved by the use of silicon nitride mask. The mesas shapes and their slopes became then regular, independently of etching depth. Second fabrication step was etching of selected area. Couple of solutions were examined, but in details HCl:H3PO4mixture in various proportions, which gave the best results in mesas shapes and orientations relative to the substrate. After that, the etching mask material was removed from the epilayer using a buffered hydrofluoric acid (BHF). The last step was epitaxial regrowth. To see how the epitaxial growth process was performed on different areas of patterned substrate it was suggested using a “sandwich”, which consisted of 50 layers of indium phosphide and indium gallium arsenide. This idea helped to understand the phenomena occurring during the epitaxial growth on that kind of substrate. The highest growth rate occurred on the top of the mesas and the lowest on their slopes. Described experiments are introduction to the studies on epitaxial growth of buried heterostructure (BH).
Słowa kluczowe
EN epitaxy   MOVPE   patterned substrate   wet etching   mask material  
Wydawca Springer
Czasopismo Materials Science Poland
Rocznik 2016
Tom Vol. 34, No. 4
Strony 872--880
Opis fizyczny Bibliogr. 9 poz., rys., tab.
Twórcy
autor Kosior, Ł.
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
autor Radziewicz, D.
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
autor Zborowska-Lindert, I.
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
autor Stafiniak, A.
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
autor Badura, M.
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
autor Ściana, B.
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Bibliografia
[1] TANBUN-EK T., LOGAN R.A., TEMKIN H., OLSSON N.A., SERGENT A.M., WECHT K.W., IEEE Photonics Tech. L., 7 (1988), 453.
[2] TURCO F.S., TAMARGO M.C., HWENG D.M., NAHORY R.E., WERNER J., KASH K., KAPON E., Appl. Phys. Lett., 56 (1990), 72.
[3] MILLER B.I., KOREN U., CAPIK R.J., Electron. Lett., 18 (1986), 947.
[4] IDA M., YAMAHATA S., KUSISHIMA K., ITO H., KOBAYASHI T., MATSUOKA Y., IEEE T. Electron. Dev., 11 (1996), 1812.
[5] HUANG R.T, JIANG C.L., APPELBAUM A., RENNER D., ZEHR S.W., J. Electron. Mater., 11 (1990), 1313.
[6] GALEUCHET Y.D., ROENTGEN P., GRAF V., Appl. Phys. Lett., 53 (1988), 2638.
[7] MAWATARI H., FUKUDA M., MATSUMOTO S.I., KISHI K., ITAYA Y., Microelectron. Reliab., 11 – 12 (1996), 1915.
[8] GALEUCHET Y.D., ROENTGEN P., GRAF V., J. Appl. Phys., 68 (1990), 516.
[9] KUECH T.F., TISCHLER M.A., POTEMSKI R., Appl. Phys. Lett., 54 (1989), 910.
Uwagi
Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).
Kolekcja BazTech
Identyfikator YADDA bwmeta1.element.baztech-a17088a0-d1b8-443e-8094-5dca6e9ce599
Identyfikatory
DOI 10.1515/msp-2016-0103