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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-9e5eb425-8798-4434-ab85-5b7e3a8a493a

Czasopismo

Archives of Metallurgy and Materials

Tytuł artykułu

Characteristics of GZO/IZO Dual-Layer as an Electron Transport Layer in Dye-Sensitized Solar Cell

Autorzy Manzari Tavakoli, M. H.  Ahmadi, M.  Sabet, M. 
Treść / Zawartość
Warianty tytułu
Języki publikacji EN
Abstrakty
EN GZO/IZO semiconductor thin films were prepared on the ITO substrate via sol-gel spin coating method for using in the dye-sensitized solar cells (DSSCs). For this purpose, GZO and IZO thin films were optimized by the percentage of doping gallium and indium in zinc oxide and were studied their electrical, optical and structural properties. After that, the layers with the best performance were selected for use in the DSSCs. The concentration of all solutions for spin coating processes was 0.1 M and zinc oxide has been doped with gallium and indium, with different doping percentages (0, 0.5, 1, 2 and 4 volume percentage). So, by studying the properties of the fabricated thin films, it was found the films with 0.5%GZO and 0.5%IZO have the best performance and hence, the optimized dual-layer (0.5% GZO/0.5% IZO (GIZO)) were prepared and studied their electrical and optical properties. The synthesized optimized dual-layer film was successfully used as the working electrode for dye-sensitized solar cells. The sample with 0.5%IZO shows the 9.1 mA/cm2short-circuit current density, 0.52 V open circuit voltage, 63% fill factor and 2.98% efficiency.
Słowa kluczowe
EN dual-layer   sol-gel   spin coating   thin film   GIZO   solar cell  
Wydawca Polish Academy of Sciences, Committee of Metallurgy, Institute of Metallurgy and Materials Science
Czasopismo Archives of Metallurgy and Materials
Rocznik 2018
Tom Vol. 63, iss. 4
Strony 1609--1614
Opis fizyczny BIbliogr. 20 poz., fot., rys., tab.
Twórcy
autor Manzari Tavakoli, M. H.
  • Vali-e-Asr University of Rafsanjan, Faculty of Science, Department of Physics, Rafsanjan 7718897111, Iran
autor Ahmadi, M.
  • Vali-e-Asr University of Rafsanjan, Faculty of Science, Department of Physics, Rafsanjan 7718897111, Iran, mehdi_ahmadi79@yahoo.com
autor Sabet, M.
  • Vali-e-Asr University of Rafsanjan, Faculty of Science, Department of Chemistry, Rafsanjan 7718897111, Iran
Bibliografia
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Uwagi
PL Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).
Kolekcja BazTech
Identyfikator YADDA bwmeta1.element.baztech-9e5eb425-8798-4434-ab85-5b7e3a8a493a
Identyfikatory
DOI 10.24425/amm.2018.125084