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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-899586b8-0eae-43c3-8e9e-ddd624bc8004

Czasopismo

Materials Science Poland

Tytuł artykułu

Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x

Autorzy Zhao, C.-Z.  Wei, T.  Sun, X.-D.  Wang, S.-S.  Lu, K.-Q. 
Treść / Zawartość http://www.materialsscience.pwr.wroc.pl/
Warianty tytułu
Języki publikacji EN
Abstrakty
EN A model is developed to describe the pressure dependence of the band gap energy for the dilute nitride GaNxAs1-x. It is found that the sublinear pressure dependence of E-is due to the coupling interaction between E+and E-. We have also found that GaNxAs1-xneeds much larger pressure than GaAs to realize the transition from direct to indirect band gap. It is due to two factors. One is the coupling interaction between the E+and E-. The other is that the energy difference between the X conduction band minimum (CBM) and the G CBM in GaNxAs1-xis larger than that in GaAs. In addition, we explain the phenomenon that the energy difference between the X CBM and the G CBM in GaNxAs1-xis larger than that in GaAs. It is due to the impurity-host interaction.
Słowa kluczowe
EN GaNAs   band gap energy   pressure dependence   dilute nitride  
Wydawca Springer
Czasopismo Materials Science Poland
Rocznik 2016
Tom Vol. 34, No. 4
Strony 881--885
Opis fizyczny Bibliogr. 18 poz., rys.
Twórcy
autor Zhao, C.-Z.
  • Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information, as3262001@aliyun.com
autor Wei, T.
  • Engineering, Tianjin Polytechnics University, Tianjin, 300387, China
autor Sun, X.-D.
  • Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information
autor Wang, S.-S.
  • Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information
autor Lu, K.-Q.
  • Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information
Bibliografia
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[17] ZHAO C.Z., WEI T., SUN X.D., WANG S.S., LU K.Q., J. Alloy. Compd., 608 (2014), 66.
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Uwagi
Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).
Kolekcja BazTech
Identyfikator YADDA bwmeta1.element.baztech-899586b8-0eae-43c3-8e9e-ddd624bc8004
Identyfikatory
DOI 10.1515/msp-2016-0110