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Optical and electrical properties of (Ti-V)Ox thin film as n-type Transparent Oxide Semiconductor

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EN
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EN
In this paper, the influence of vanadium doping on optical and electrical properties of titanium dioxide thin films has been discussed. The (Ti-V)Ox thin films was deposited on silicon and Corning glass substrates using high energy reactive magnetron sputtering process. Measurements performed with the aid of x-ray diffraction revealed, that deposited thin film was composed of nanocrystalline mixture of TiO2-anatase, V2O3 and β-V2O5 phases. The amount of vanadium in the thin film, estimated on the basis of energy dispersive spectroscopy measurement, was equal to 3 at. %. Optical properties were evaluated based on transmission and reflection measurements. (Ti-V)Ox thin film was well transparent and the absorption edge was shifted by only 11 nm towards longer wavelengths in comparison to undoped TiO2. Electrical measurements revealed, that investigated thin film was transparent oxide semiconductors with n-type electrical conduction and resistivity of about 2.7 · 105 Ωcm at room temperature. Additionally, measured I-V characteristics of TOS-Si heterostructure were nonlinear and asymmetrical.
Rocznik
Strony
583--594
Opis fizyczny
Bibliogr. 23 poz., rys., tab., wykr.
Twórcy
autor
  • Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, 11/17 Janiszewskiego St., 50-372 Wroclaw, Poland, michal.mazur@pwr.wroc.pl
  • Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, 11/17 Janiszewskiego St., 50-372 Wroclaw, Poland
  • Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, 11/17 Janiszewskiego St., 50-372 Wroclaw, Poland
Bibliografia
  • [1] A. Facchetti and T.J. Marks, Transparent Electronics – From Synthesis to Applications, John Wiley & Sons Ltd., London, 2010.
  • [2] I.P. Parkin and R.G. Palgrave, “Self-cleaning coatings”, J. Mater. Chem. 15, 1689–1695 (2005).
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  • [7] Y. Hayashi, K. Kondo, K. Murai, T. Moriga, I. Nakabayashi, H. Fukumoto, and K. Tominaga, “ZnO-SnO2 transparent conductive films deposited by opposed target sputtering system of ZnO and SnO2 targets”, Vacuum 74, 607–611 (2004).
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  • [9] K. Sieradzka, M. Mazur, D. Wojcieszak, J. Domaradzki, D. Kaczmarek, and E. Prociów, “P-type transparent Ti-V oxides semiconductor thin film as a prospective material for transparent electronics”, Thin Solid Films 520, 3472–3476 (2012).
  • [10] E. Prociów, K. Sieradzka, J. Domaradzki, D. Kaczmarek, and M. Mazur, “Thin films based on nanocrystalline TiO2 for transparent electronics”, Acta Phys. Pol. A 116, S-72–S-74 (2009).
  • [11] K. Sieradzka, J. Domaradzki, E. Prociów, M. Mazur, and M. Łapiński, “Properties of nanocrystalline TiO2:V thin films as a transparent semiconducting oxides”, Acta Phys. Pol. A 116, S-33–S-35 (2009).
  • [12] M. Kumar, J.P. Kar, I.S. Kim, S.Y. Choi, and J.M. Myoung, “Growth of p-type ZnO thin film on n-type silicon substrate and its application as hybrid homojunction”, Curr. Appl. Phys. 11, 65–69 (2011).
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  • [14] K. Sieradzka, D. Kaczmarek, J. Morgiel, J. Domaradzki, E. Prociow, and B. Adamiak, “Structural properties of Ti-V oxide semiconductor thin films”, Cent. Eur. J. Phys. 11 (2), 251–257 (2012).
  • [15] M. Mazur, K. Sieradzka, D. Kaczmarek, J. Domaradzki, D. Wojcieszak, P. Domanowski, and E. Prociów, “Investigation of physicochemical and tribological properties of transparent oxide semiconducting thin films based on Ti-V oxides”, Mater. Sci.-Poland 31 (3), 434–445 (2013).
  • [16] S. Surnev, M.G. Ramsey, and F.P. Netzer, “Vanadium oxide surface studies”, Progr. Surf. Sci. 73, 117–165 (2003).
  • [17] D. Kaczmarek, E. Prociow, J. Domaradzki, A. Borkowska, W. Mielcarek, and D. Wojcieszak, “Influence of substrate type and its placement on structural properties of TiO2 thin films prepared by the high energy reactive magnetron sputtering method”, Mater. Sci.-Poland 26 (1), 113–117 (2008).
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  • [21] J. Domaradzki, M. Mazur, K. Sieradzka, D.Wojcieszak, and B. Adamiak, “Photocatalytic properties of Ti-V oxides thin films”, Opt. Appl. 43 (1), 153–162 (2013).
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  • [23] Z. Wang, U. Helmersson, and P. Kall, “Optical properties of anatase TiO2 thin films prepared by aqueous sol-gel process at low temperature”, Thin Solid Films 405 (1–2), 50–54 (2002).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-600d8e0a-ac2a-49a2-82f1-658fc79b9c04
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