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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-5b5731e5-5a9d-49e1-aaef-68c0f650f9fe

Czasopismo

Materials Science Poland

Tytuł artykułu

Spectroscopic investigations of polycrystalline InxSb20−xAg10Se70 (0 6 x 6 15) multicomponent chalcogenides

Autorzy Sharma, R.  Sharma, S.  Kumar, P.  Chander, R.  Thangaraj, R.  Mian, M. 
Treść / Zawartość http://www.materialsscience.pwr.wroc.pl/
Warianty tytułu
Języki publikacji EN
Abstrakty
EN The composition dependence of physical properties of chalcogenides has recently been studied for their phase change properties and energy conversion. In the present work, we report the structure, composition, optical and Raman spectroscopy results for bulk polycrystalline InxSb20-xAg10Se70(0 ≤ × ≤ 15) samples. The phase quantification and composition have been studied by using XRD and EDX techniques. The alloy composition up to 5 at.% of indium resulted in crystallization of AgSbSe2, while further increase in In content favored the formation of another chalcopyrite AgInSe2phase yielding the solid solutions for this alloy system. A decrease in band gap up to x = 5 followed by its increase with an increase in indium concentration has been observed. The variations in shape and position of characteristic Raman bands has been used for understanding the structural modifications of the network with the variation in indium content.
Słowa kluczowe
EN chalcogenides   optical properties   Raman spectroscopy   XRD   analysis   EDS  
Wydawca Springer
Czasopismo Materials Science Poland
Rocznik 2016
Tom Vol. 34, No. 4
Strony 794--799
Opis fizyczny Bibliogr. 36 poz., rys., tab.
Twórcy
autor Sharma, R.
  • Semiconductors Laboratory, Department of Physics, GND University, Amritsar 143005, India
autor Sharma, S.
  • Semiconductors Laboratory, Department of Physics, GND University, Amritsar 143005, India
autor Kumar, P.
autor Chander, R.
  • Semiconductors Laboratory, Department of Physics, GND University, Amritsar 143005, India
autor Thangaraj, R.
  • Semiconductors Laboratory, Department of Physics, GND University, Amritsar 143005, India
autor Mian, M.
  • Semiconductors Laboratory, Department of Physics, GND University, Amritsar 143005, India
Bibliografia
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Uwagi
Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).
Kolekcja BazTech
Identyfikator YADDA bwmeta1.element.baztech-5b5731e5-5a9d-49e1-aaef-68c0f650f9fe
Identyfikatory
DOI 10.1515/msp-2016-0114