Narzędzia help

Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
cannonical link button

http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-5991d554-5ce6-46cf-82b0-c13a272cad31

Czasopismo

Optica Applicata

Tytuł artykułu

Oscillator strength of optical transitions in InGaAsN/GaAsN/GaAs quantum wells

Autorzy Mika, A.  Sek, G.  Ryczko, K.  Kozub, M.  Musial, A.  Marynski, A.  Misiewicz, J.  Langer, F.  Höfling, S.  Appel, T.  Kamp, M.  Forchel, A. 
Treść / Zawartość
Warianty tytułu
Języki publikacji EN
Abstrakty
EN Experimental and theoretical considerations and results on the effect of nitrogen incorporation on the oscillator strength of optical transitions in InGaNAs/GaAs quantum wells (QWs) are presented. Therefore, a set of dilute nitride quantum well structures was grown by molecular beam epitaxy. Optical investigation via spectroscopic methods have been performed at various temperatures for both the as-grown samples, and after rapid thermal annealing. The fundamental transition energy and its oscillator strength vs. the QW composition have been systematically investigated. Additionally, the effect of the bandgap discontinuities on the transitions intensity has also been considered. The experimental data have been confronted with the band structure calculations within the effective mass approximation employing a two level repulsion model for the nitrogen-containing structures. The obtained results are crucial for possible future applications employing the quantum well in cavity structures and bringing the practical exploitation of quantum electrodynamics phenomena to the telecommunication spectral range.
Słowa kluczowe
EN dilute nitride   quantum well   oscillator strength  
Wydawca Oficyna Wydawnicza Politechniki Wrocławskiej
Czasopismo Optica Applicata
Rocznik 2013
Tom Vol. 43, nr 1
Strony 53--60
Opis fizyczny Bibliogr. 11 poz., rys., tab., wykr.
Twórcy
autor Mika, A.
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor Sek, G.
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland, grzegorz.sek@pwr.wroc.pl
autor Ryczko, K.
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor Kozub, M.
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor Musial, A.
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor Marynski, A.
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor Misiewicz, J.
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor Langer, F.
  • Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
autor Höfling, S.
  • Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
autor Appel, T.
  • Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
autor Kamp, M.
  • Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
autor Forchel, A.
  • Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
Bibliografia
[1] KONDOW M., UOMI K., HOSOMI K., MOZUME T., Gas-source molecular beam epitaxy of GaNxAs1–x using a N radical as the N source, Japanese Journal of Applied Physics, Part 2: Letters 33(8A), 1994, pp. L1056–L1058.
[2] ALEXANDROPOULOS D., ADAMS M.J., RORISON J., Analysis of GaInNAs-based devices: Lasers and semiconductor optical amplifiers, [In] Dilute III-V Nitride Semiconductors and Material Systems, [Ed.] Ayse Erol, Springer, Heidelberg, 2008.
[3] LE SI DANG, HEGER D., ANDRÉ R., BOEUF F., ROMESTAIN R., Stimulation of polariton photoluminescence in semiconductor microcavity, Physical Review Letters 81(18), 1998, pp. 3920–3923.
[4] BALILI R., HARTWELL V., SNOKE D., PFEIFFER L., WEST K., Bose–Einstein condensation of microcavity polaritons in a trap, Science 316(5827), 2007, pp. 1007–1010.
[5] LAI C.W., KIM N.Y., UTSUNOMIYAV S., ROUMPOS G., DENG H., FRASER M.D., BYRNES T., RECHER P., KUMADA N., FUJISAWA T., YAMAMOTO Y., Coherent zero-state and π -state in an exciton–polariton condensate array, Nature 450(7169), 2007, pp. 529–532.
[6] BAOPING ZHANG, KANO S.S., SHIRAKI Y., ITO R., Reflectance study of the oscillator strength of excitons in semiconductor quantum wells, Physical Review B 50(11), 1994, pp. 7499–7508.
[7] SHAN W., WALUKIEWICZ W., AGER J.W., HALLER E.E., GEISZ J.F., FRIEDMAN D.J., OLSON J.M., KURTZ S.R., Band anticrossing in GaInNAs alloys, Physical Review Letters 82(6), 1999, pp. 1221–1224.
[8] ANDREANI L.C., Confined Electrons and Photons - New Physics and Devices, [Eds.] Burstein E., Weisbuch C., Plenum, New York, 1995, p. 57.
[9] MASSELINK W.T., PEARAH P.J., KLEM J., PENG C.K., MORKOC H., SANDERS G.D., YIA-CHUNG CHANG, Absorption coefficients and exciton oscillator strengths in AlGaAs–GaAs superlattices, Physical Review B 32(12), 1985, pp. 8027–8034.
[10] KNOX R.S., Theory of Excitons, Academic Press, New York, 1963.
[11] KUDRAWIEC R., SĘK G., MISIEWICZ J., GOLLUB D., FORCHEL A., Explanation of annealing-induced blueshift of the optical transitions in GaInAsN/GaAs quantum wells, Applied Physics Letters 83(14), 2003, pp. 2772–2774.
Kolekcja BazTech
Identyfikator YADDA bwmeta1.element.baztech-5991d554-5ce6-46cf-82b0-c13a272cad31
Identyfikatory